Method for rapidly detecting defects in two-dimensional material
The invention discloses a method for rapidly detecting defects in a two-dimensional material, and relates to the technical field of semiconductors, a sample for defect detection is formed, and the sample sequentially comprises a substrate, the two-dimensional material and a modification layer from b...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a method for rapidly detecting defects in a two-dimensional material, and relates to the technical field of semiconductors, a sample for defect detection is formed, and the sample sequentially comprises a substrate, the two-dimensional material and a modification layer from bottom to top; the sample forming and two-dimensional material defect detection method specifically comprises the following steps: step 1, putting a selected substrate into deposition equipment to deposit a two-dimensional material to be detected; step 2, putting a to-be-detected two-dimensional material into ALD, depositing an oxide on the surface of the to-be-detected two-dimensional material by using ALD equipment, and taking the deposited oxide as a modification layer; step 3, acquiring a sample image with a modification layer, and performing image processing on the sample image to obtain the defect type and defect density of the two-dimensional material in the sample; according to the method for rapidly detecti |
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