In-situ growth hydrogen-substituted graphdiyne gas sensor and preparation method thereof

The invention belongs to the field of novel carbon materials, and particularly relates to an in-situ growth hydrogen-substituted graphdiyne gas sensor and a preparation method thereof. Comprising the following steps: 1, dissolving trimethylsilylacetylene in tetrahydrofuran, adding n-butyllithium and...

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Hauptverfasser: GONG MAN, YU LINGMIN, FAN XINHUI, ZHANG CHUANTAO, CAO LEI, XUE RUSHUN, LI SENLIN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention belongs to the field of novel carbon materials, and particularly relates to an in-situ growth hydrogen-substituted graphdiyne gas sensor and a preparation method thereof. Comprising the following steps: 1, dissolving trimethylsilylacetylene in tetrahydrofuran, adding n-butyllithium and anhydrous zinc chloride, adding tetrapalladium and 1, 3, 5-tribromobenzene, and reacting to obtain 1, 3, 5-triacetylene benzene; 2, preparing a two-phase solution: dissolving 1, 3, 5-triacetylene benzene in dichloromethane, and slowly adding pure water to form a water phase; the preparation method comprises the following steps: adding palladium dichloride (II), 10-40 mg of cuprous iodide and 1, 3, 5-tribromobenzene into pure water to form an aqueous solution; slowly adding the water solution into the water phase to form a two-phase solution; and step 3, putting the FTO into a two-phase intersection interface, and carrying out in-situ growth of the hydrogen-substituted graphdiyne to obtain the gas sensor of which t