Integrated electronic device with improved conductive contact structure and related manufacturing process

The invention relates to an integrated electronic device with an improved conductive contact structure and a related manufacturing process. The integrated electronic device includes: a silicon semiconductor body delimited by a front surface and including at least a first semiconductive region of a first conductivity type and a second semiconductive region of a second conductivity type, the first semiconductive region extending from the front surface into the semiconductor body, the second semiconductive region extending below the first semiconductive region; a dielectric coverage area; a trench extending through the dielectric cover region and through a front portion of the semiconductor body in such a way that a portion of the first semiconductive region laterally faces the trench, the trench extending partially inside the second semiconductive region; a conductive contact structure extending into the trench and comprising: a coated region of titanium silicide covering a bottom of the trench, in contact with