High-performance bonding copper wire material and preparation method thereof

The invention relates to a high-performance bonding copper wire material and a preparation method thereof, the high-performance bonding copper wire material comprises the following alloy components in proportion: 10-80PPm of P, 5-50PPm of Ag, 0-30PPm of Ni, 0-30PPm of Cr and 0-50PPm of La, and P + A...

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Bibliographische Detailangaben
Hauptverfasser:	CHEN SHUAIFENG, SONG HONGWU, KONG FANYA, DENG SIYING, WANG SOONWEI, ZHANG SHIHONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ALLOYS APPARATUS THEREFOR AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKINGWITHOUT ESSENTIALLY REMOVING MATERIAL BASIC ELECTRIC ELEMENTS CASTING CASTING OF METALS CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES,OTHERWISE THAN BY ROLLING MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL METALLURGY PERFORMING OPERATIONS POWDER METALLURGY PRETREATMENT OF RAW MATERIALS PRODUCTION AND REFINING OF METALS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE PUNCHING METAL REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention relates to a high-performance bonding copper wire material and a preparation method thereof, the high-performance bonding copper wire material comprises the following alloy components in proportion: 10-80PPm of P, 5-50PPm of Ag, 0-30PPm of Ni, 0-30PPm of Cr and 0-50PPm of La, and P + Ag + Ni + Cr + La is less than or equal to 100PPm, and La/P is less than 0.5; the impurity elements meet the following conditions: O is less than 5PPm, H is less than 1PPm, and the sum of the other impurity elements is less than 30PPm. The preparation process of the bonding copper wire material comprises the steps of preparing a mother alloy through vacuum down-drawing, preparing an alloy rod blank through secondary vacuum down-drawing dilution and preparing a copper alloy wire through multi-pass drawing. The method has the advantages that the performance and the structure of the wire are adjusted by combining multiple means of trace alloying component design, high-purity and high-uniformity master alloy preparation