Semiconductor laser element and method for manufacturing semiconductor laser element
A semiconductor laser element (10) is provided with: a first semiconductor layer of a first conductivity type; an active layer (23) disposed above the first semiconductor layer; a second semiconductor layer of a second conductivity type disposed above the active layer (23); an insulating film (30) d...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | A semiconductor laser element (10) is provided with: a first semiconductor layer of a first conductivity type; an active layer (23) disposed above the first semiconductor layer; a second semiconductor layer of a second conductivity type disposed above the active layer (23); an insulating film (30) disposed above the second semiconductor layer; and a contact electrode (40) disposed above the second semiconductor layer and in contact with the second semiconductor layer, the second semiconductor layer having a ridge portion (24R), the insulating film (30) having an opening portion (30a) disposed at a position corresponding to an upper surface (24Rt) of the ridge portion (24R), the contact electrode (40) being disposed in the opening portion (30a), and the contact electrode (40) being disposed in the opening portion (30a). A side surface (30s) of the insulating film (30), said side surface (30s) being located at the periphery of the opening (30a), has a lower-stage side surface region (31) and an upper-stage side |
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