Light emitting diode and manufacturing method of light emitting diode
The invention provides a light-emitting diode and a manufacturing method of the light-emitting diode, and belongs to the field of light-emitting devices. The light-emitting diode comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence, th...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a light-emitting diode and a manufacturing method of the light-emitting diode, and belongs to the field of light-emitting devices. The light-emitting diode comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence, the transparent conducting layer is positioned on the second semiconductor layer; the dielectric layer covers the transparent conductive layer, and the dielectric layer is provided with a plurality of first through holes; the silver reflecting layer is located on the dielectric layer, and the silver reflecting layer is connected with the transparent conducting layer through the plurality of first through holes; the first passivation layer covers the transparent conductive layer and the dielectric layer, the first passivation layer is provided with a second through hole and a plurality of passivation layer compensation blocks located in the second through hole, and the plurality of passivation layer compensation block |
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