End point detection method for dry etching

The invention belongs to the technical field of semiconductor etching, and discloses a dry etching end point detection method, which comprises the following steps of: modulating a dry etching machine into an end point detection mode, and presetting various parameters for carrying out dry etching on an oxide layer of a silicon carbide-based chip; adjusting various preset parameters in the end point detection mode, and performing dry etching on the oxide layer of the silicon carbide-based chip according to the adjusted various parameters; and automatically detecting the etching end point of the oxide layer of the silicon carbide-based chip in real time, and controlling the dry etching machine to stop etching when the etching end point is detected. According to the dry etching end point detection method provided by the invention, the etching end point of the oxide layer of the silicon carbide-based chip can be automatically detected by adjusting various preset parameters in the end point detection mode, and the