Method and device for calculating surface temperature uniformity in wafer rapid annealing process
The invention discloses a method and a device for calculating surface temperature uniformity in a wafer rapid annealing process. The method comprises the following steps: acquiring measurement data of key factors related to wafer surface temperature in the wafer rapid annealing process; wafer surfac...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a method and a device for calculating surface temperature uniformity in a wafer rapid annealing process. The method comprises the following steps: acquiring measurement data of key factors related to wafer surface temperature in the wafer rapid annealing process; wafer surface temperature distribution data is obtained based on the measurement data and a trained neural network, and the trained neural network is configured to generate the wafer surface temperature distribution data according to the measurement data; and calculating wafer surface temperature uniformity based on the wafer surface temperature distribution data. According to the method, the neural network model of the cavity temperature, the wafer substrate temperature and the heating current of the heating lamp tube group on the wafer surface temperature distribution is established, so that the wafer surface temperature distribution can be conveniently calculated in real time in the rapid annealing treatment process of the |
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