Junction temperature detection method based on IGBT saturation voltage drop inflection point

The invention belongs to the technical field of power electronics, and discloses a junction temperature detection method based on an IGBT saturation voltage drop inflection point, which comprises the following steps: acquiring IGBT saturation voltage drop inflection point voltage and inflection point current information according to saturation voltage drop and collector current information under different junction temperatures; obtaining equivalent voltage drop according to the inflection point voltage and inflection point current information; establishing a database, wherein the database comprises a corresponding relationship among the equivalent voltage drop, the collector current and the junction temperature; and obtaining an equivalent voltage drop according to the measured saturation voltage drop, the collector current, the inflection point voltage and the inflection point current information, and obtaining corresponding junction temperature data in the database according to the equivalent voltage drop a