Semiconductor memory device and method for manufacturing semiconductor memory device

The invention provides a semiconductor memory device capable of reducing the risk of cantilever beam bending during replacement and a method for manufacturing the semiconductor memory device. A semiconductor memory device according to an embodiment includes: a first semiconductor layer; a second semiconductor layer; a third semiconductor layer; a first insulating layer; a laminated body provided above the first insulating layer and formed by alternately laminating a plurality of first conductive layers and a plurality of second insulating layers in a first direction; a pillar penetrating the laminated body in the first direction and including a fourth semiconductor layer, a side surface of the fourth semiconductor layer being in contact with the second semiconductor layer; and a separation part that penetrates the laminated body in the first direction, separates the laminated body in a second direction intersecting the first direction, extends in the first direction and in a third direction intersecting the f