Thin dielectric substrate large-angle incident phase stable 1bit metamaterial unit structure
The invention discloses a thin dielectric substrate wide-angle incident phase stable 1bit metamaterial unit structure, which comprises a first dielectric substrate and a second dielectric substrate, a first metal layer and a second metal layer are respectively arranged on the upper surface and the l...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a thin dielectric substrate wide-angle incident phase stable 1bit metamaterial unit structure, which comprises a first dielectric substrate and a second dielectric substrate, a first metal layer and a second metal layer are respectively arranged on the upper surface and the lower surface of the first dielectric substrate, and a third metal layer is arranged on the upper surface of the second dielectric substrate. The first metal layer comprises pentagonal metal patches in axial symmetry, and the PIN diode is welded between the two metal patches of the first metal layer; the second metal layer is a unit ground layer for avoiding the metal through hole; the third metal layer comprises two bias circuit layers consisting of fan-shaped filters and bias lines; the two metal patches of the first metal layer are connected with the two bias circuits of the third metal layer through metal through holes penetrating through the upper surface and the lower surface respectively, so that the two meta |
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