Bridge contact structure
Techniques for forming integrated circuits with bridge contact structures are disclosed. For example, a bridge contact structure may bridge between source/drain contacts and to adjacent gate electrodes within the same device layer. In an example, a gate cut-out structure extends in a first direction...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | Techniques for forming integrated circuits with bridge contact structures are disclosed. For example, a bridge contact structure may bridge between source/drain contacts and to adjacent gate electrodes within the same device layer. In an example, a gate cut-out structure extends in a first direction to separate a source or drain region and a gate structure of an adjacent semiconductor device. Contacts may be formed over source or drain regions of adjacent devices on opposite sides of the gate cut in a second direction orthogonal to the first direction. A portion of the gate cut is replaced with a first conductive bridge between the source or drain contacts. A portion of the one or more dielectric barriers between one of the source or drain contacts and the adjacent gate electrode is replaced with a second conductive bridge extending in the first direction between the source or drain contacts and the gate structure.
公开了形成具有桥接接触结构的集成电路的技术。例如,桥接接触结构可以在源极/漏极接触部之间桥接并桥接到同一器件层之内的相邻栅电极。在示例中,栅极切口结构在第一方向上延伸以分隔相邻半导体器件的源 |
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