METHOD OF FORMING SEMICONDUCTOR STRUCTURE

A method for forming a semiconductor structure is disclosed. The method includes forming a dual layer hard mask by depositing a first hard mask layer and a second hard mask layer on a substrate including a first region and a second region. An exemplary structure formed may include a CMOS device stru...

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Bibliographische Detailangaben
Hauptverfasser:	WINKLER JERRY L, CHOUDHURY DEBASHIS, SCHMOTZER MARTIN, BALSEANU MIHAELA, MULAPUDI, KARTHIK
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method for forming a semiconductor structure is disclosed. The method includes forming a dual layer hard mask by depositing a first hard mask layer and a second hard mask layer on a substrate including a first region and a second region. An exemplary structure formed may include a CMOS device structure. 公开了用于形成半导体结构的方法。该方法包括通过在包括第一区域和第二区域的衬底上沉积第一硬掩模层和第二硬掩模层来形成双层硬掩模。形成的示例性结构可以包括CMOS器件结构。