Molded power module and power module assembly

A molded power module (2) comprises:-a substrate (12) comprising an upper conductive layer (5, 6); the invention relates to a semiconductor device (10, 10 ') comprising a substrate (12), an upper conductive layer (5, 6) on the substrate (12), at least one semiconductor (10, 10') on the upper conductive layer (5, 6) of the substrate (12), a molding portion (30) covering the at least one semiconductor (10), the molding portion (30) comprising at least two humps (18, 18 ', 18 ") protruding from a remaining area of the molding portion (30), the humps (18, 18', 18") being spaced apart from each other. 一种模制功率模块(2)包括：-衬底(12)，所述衬底包括上导电层(5、6)；-至少一个半导体(10、10')，所述至少一个半导体位于衬底(12)的上导电层(5、6)上；-模制部分(30)，所述模制部分覆盖至少一个半导体(10)。模制部分(30)包括至少两个从所述模制部分(30)的剩余区域突出的凸丘部(18、18'、18")，其中所述凸丘部(18、18'、18")彼此间隔开。