Semiconductor device and manufacturing method thereof

The invention relates to a semiconductor device and a manufacturing method thereof. A method for manufacturing a semiconductor device includes: forming a lower electrode layer containing carbon by applying AC power; forming a storage layer on the lower electrode layer; and forming an upper electrode layer containing carbon over the memory layer without applying AC power. 本公开涉及半导体器件及其制造方法。一种用于制造半导体器件的方法包括：通过施加AC功率来形成含有碳的下电极层；在下电极层之上形成存储层；以及在不施加AC功率的情况下在存储器层之上形成含有碳的上电极层。