SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

The semiconductor device may include a device isolation portion on a substrate, the device isolation portion defining a first active portion and a second active portion, a center portion of the first active portion being adjacent to an edge portion of the second active portion in a first direction. The first impurity region may be in a center portion of the first active portion, and the second impurity region may be in an edge portion of the second active portion. The first bit line may be in direct contact with the first impurity region and may extend across the substrate in a second direction intersecting the first direction. The storage node contact may be in contact with the second impurity region, the upper and lower sidewalls of the storage node contact being not vertically aligned with each other on a common side of the storage node contact. 半导体装置可以包括：衬底上的器件隔离部，器件隔离部限定第一有源部分和第二有源部分，第一有源部分的中心部分在第一方向上与第二有源部分的边缘部分相邻。第一杂质区可以在第一有源部分的中心部分中，第二杂质区可以在第二有源部分的边缘部分中。第一位线可以与第一杂质区直接接触，并且可以在与第一方向相交的第二方向上横跨衬底延伸。存储节点接触