Semiconductor optical device

A semiconductor optical device includes: a mesa-strip structure extending in a first direction; a pair of buried layers, each buried layer including a first inclined surface adjacent to a top surface of the mesa-stripe structure, each buried layer including a first upstanding surface upstanding from an upper end of the first inclined surface, each buried layer including an upper surface higher than the top surface; an insulating film on the upper surface; and an electrode film on the top surface, the first inclined surface, and the insulating film. The first upright surface has an upper end. The upper surface of at least one of the pair of buried layers has a recess. Each recess has a second inclined surface inclined downwardly from the upper surface. The second inclined surface has an upper end extending in a second direction perpendicular to the first direction. 一种半导体光学器件包括：在第一方向上延伸的台面-条带结构；一对掩埋层，每个掩埋层包括与所述台面-条带结构的顶表面相邻的第一倾斜表面，每个掩埋层包括从所述第一倾斜表面的上端直立的第一直立表面，每个掩埋层包括高于所述顶表面的上表面；在所述上表面上的绝缘膜；以及所述顶面、所述第一斜面及所述绝缘膜上的