IR chip and photoelectric coupler

The invention discloses an IR chip and a photoelectric coupler, and the IR chip comprises a Si substrate; the doping layer is arranged on the Si substrate; the P electrode is connected with the Si substrate layer and deviates from the doping layer, and an electrode channel exists between the P electrode and the doping layer; the N electrode deviates from the Si substrate, and an electrode channel exists between the N electrode and the doping layer; and a SiO2 passivation layer, wherein the doping layer comprises a P-type doping layer, a PN junction and an N-type doping layer which are sequentially arranged on the Si substrate; and the SiO2 passivation layer is coated on the outer wall of the PN junction. According to the technical scheme, the strength of the IR chip is improved, the chip is prevented from being damaged in the actual production and packaging process, and the reliability of the IR chip is improved. 本发明公开了IR芯片以及光电耦合器，其中IR芯片，包括：Si衬底；设置于所述Si衬底上的掺杂层；与所述Si衬底层相接，背离所述掺杂层，且与所述掺杂层存在电极通道的P电极；背离所述Si衬底，与所述