Semiconductor laminated structure and forming method thereof

The invention relates to a semiconductor laminated structure and a forming method thereof. The forming method of the semiconductor laminated structure comprises the following steps: forming a reference alignment mark in a substrate; according to a to-be-stacked film layer material and a single-layer film layer thickness in the first laminated structure, performing diffraction light intensity simulation based on the reference alignment mark to determine the number of film layers of the first laminated structure; forming a first laminated structure on the substrate according to the number of the film layers, wherein the first laminated structure comprises a plurality of film layers formed by alternately laminating at least two different materials; and forming a reference alignment mark in the first laminated structure, wherein the orthographic projection of the reference alignment mark on the substrate is located outside the orthographic projection of the reference alignment mark on the substrate. According to