Non-volatile memory array and driving circuit, erasing method and chip thereof

The invention discloses a non-volatile memory array and a driving circuit and an erasing method thereof, the memory array comprises a plurality of groups of memory cell arrays, each group of memory cell array comprises a plurality of memory cells, the plurality of memory cells in the same group are connected with the same word line and different bit lines, and all the memory cells are connected with the same source line; and the at least two groups of memory cell arrays share the same deep N well and the same P well. According to the scheme, the area of the memory array can be reduced, and the erasing reliability and performance of the memory unit can be ensured. 本发明公开一种非挥发存储器阵列及其驱动电路、擦除方法，该存储器阵列包括：多组存储单元阵列，每组存储单元阵列包括多个存储单元，同一组内的所述多个存储单元连接同一字线、并连接不同位线，所有存储单元连接同一源线；至少两组存储单元阵列共用同一深N阱和同一P阱。本发明方案可以缩小存储器阵列面积，并保证对存储单元擦写的可靠性和性能。