Chemical mechanical polishing solution as well as preparation method and application thereof

The invention provides a chemical mechanical polishing solution and a preparation method and application thereof, the chemical mechanical polishing solution is different from a common alkaline lithium tantalate polishing solution, the pH value of the chemical mechanical polishing solution is 1-6, a...

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Bibliographische Detailangaben
Hauptverfasser: WANG JINLONG, FU YUQI, ZHANG SONGYUAN, JIAN LIMIN, LIU JIANGHUA
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides a chemical mechanical polishing solution and a preparation method and application thereof, the chemical mechanical polishing solution is different from a common alkaline lithium tantalate polishing solution, the pH value of the chemical mechanical polishing solution is 1-6, a single organic acid or fluoride ion salt is added in an acidic pH environment to serve as a polishing accelerant, and the polishing effect of the chemical mechanical polishing solution is greatly improved. The polishing rate of the lithium tantalate wafer can be obviously improved; the organic acid and the fluorine ion salt are simultaneously added into the polishing solution and have a remarkable synergistic effect in an acid environment, so that the removal rate of the lithium tantalate wafer can be further increased (the rate is increased to 168.43%, and the removal rate of lithium tantalate is as high as 4923/min), and the improvement effect of the removal rate is obviously higher than that of independently add