High-reliability AMB copper-clad ceramic substrate and preparation method thereof

The invention relates to the technical field of semiconductor substrate preparation, in particular to a high-reliability AMB copper-clad ceramic substrate and a preparation method thereof. The method specifically comprises the steps that firstly, Ag powder, TiH2 powder, Cu powder, TiN powder, TiO2 p...

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Bibliographische Detailangaben
Hauptverfasser: TANG DONGMEI, DOU ZHENGXU, WANG BIN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention relates to the technical field of semiconductor substrate preparation, in particular to a high-reliability AMB copper-clad ceramic substrate and a preparation method thereof. The method specifically comprises the steps that firstly, Ag powder, TiH2 powder, Cu powder, TiN powder, TiO2 powder and an organic carrier are mixed and ground, and first brazing paste is obtained; secondly, In powder is dispersed into the first brazing paste, and In-containing brazing paste is obtained; 3, the In-containing brazing paste is printed on the two surfaces of the ceramic wafer, after drying, the ceramic wafer and a copper sheet are laminated, vacuum sintering is conducted, and a copper-clad ceramic mother board is obtained; and step 4, (1) after film pasting, exposure and development treatment are carried out on the copper-clad ceramic mother board, copper etching and solder etching are carried out in sequence, and the high-reliability AMB copper-clad ceramic substrate is obtained. By changing the element comp