Glass metallization processing process of high aspect ratio through glass through hole

The invention relates to the technical field of semiconductor electroplating processing, and discloses a glass metallization processing process of a high aspect ratio through glass through hole, which comprises the following steps: a single-side coating step: forming a first seed layer above one surface of a first glass substrate and forming a second seed layer above one surface of a second glass substrate; a bonding step: overturning the second glass substrate and bonding the first seed layer and the second seed layer through a bonding layer; a drilling step: forming at least one through hole to penetrate through the second glass substrate, the second seed layer, the bonding layer, the first seed layer and the first glass substrate; a pre-wetting step; and a metallization step. The metal material can completely fill the through hole or the first through hole and the second through hole, can be applied to the through hole or the first through hole and the second through hole with a larger depth-to-width ratio