Semiconductor structure and manufacturing method thereof

The invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, a stacking structure, a supporting column and a channel column. The substrate comprises a peripheral region and an array region; the stacked structure is located on the substrate; the supporting column is located in the peripheral area and penetrates through the stacking structure; the channel columns are located in the array area and penetrate through the stacking structure, and the thickness of the supporting columns is larger than that of the channel columns. 本公开提供了一种半导体结构及其制造方法。半导体结构包括基底、堆叠结构、支撑柱与通道柱；基底包括周边区与阵列区；堆叠结构位于基底上；支撑柱位于周边区中，支撑柱穿过堆叠结构；通道柱位于阵列区中，通道柱穿过堆叠结构，支撑柱的厚度大于通道柱的厚度。