Semiconductor structure and forming method thereof

An integrated circuit (IC) structure includes a bottom level IC die and one or more top level IC dies. A first side of the one or more top level IC die is bonded to the bottom IC die. A support substrate is coupled to the second side of the one or more top level IC dies. A plurality of conductive th...

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Bibliographische Detailangaben
Hauptverfasser: LIU SHIWEI, LIN BAIYAO, JIANG XINGDA, YAN WEI, WU CUNYAN, HE JUN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:An integrated circuit (IC) structure includes a bottom level IC die and one or more top level IC dies. A first side of the one or more top level IC die is bonded to the bottom IC die. A support substrate is coupled to the second side of the one or more top level IC dies. A plurality of conductive through substrate vias (TSVs) each extend vertically through the support substrate. A metal cap structure is disposed over the support substrate. A metal cap structure is thermally coupled to the conductive TSV. The embodiment of the invention also relates to a semiconductor structure and a forming method thereof. 集成电路(IC)结构包括底部层级IC管芯以及一个或多个顶部层级IC管芯。一个或多个顶部层级IC管芯的第一侧接合至底部IC管芯。支撑衬底耦合至一个或多个顶部层级IC管芯的第二侧。多个导电衬底通孔(TSV)每个垂直延伸穿过支撑衬底。金属盖结构设置在支撑衬底上方。金属盖结构热耦合至导电TSV。本申请的实施例还涉及半导体结构及其形成方法。