Infrared detector and preparation method thereof

The embodiment of the invention provides an infrared detector and a preparation method thereof. The infrared detector comprises a first electrode; the p-S < i > core n-V2O5 shell heterostructure and the p-Si core n-V2O5 shell heterostructure are connected with the first electrode; the nanometer point layer is connected with the p-Si core and n-V2O5 shell heterostructure; and the second electrode is connected with the nanometer point layer. Wherein the p-Si core and n-V2O5 shell heterostructure comprises a p-Si nanorod and a V2O5 shell layer, so that the specific surface area and active sites of the detector are enlarged, the detector can absorb light energy more effectively, and the formation of the p-n junction structure is beneficial to reducing the recombination of photon-generated carriers, and further improving the photoelectric conversion efficiency. Meanwhile, the photoelectric property of the detector is further optimized by introducing the nano-dot layer, so that the infrared detector has good enviro