HEMT DEVICE WITH REDUCED ON-RESISTANCE AND MANUFACTURING PROCESS THEREOF

The invention relates to an HEMT device with reduced on-resistance and a process for manufacturing the same. A HEMT transistor is formed on a semiconductor body having a semiconductor heterostructure. A gate region of semiconductor material is arranged on the semiconductor body and has a side surfac...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TRINGALI CRISTIAN, CONSTANT ANDREW, UCCONARO, FABRIZIO, CASTAGNA, MARC, E
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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