HEMT DEVICE WITH REDUCED ON-RESISTANCE AND MANUFACTURING PROCESS THEREOF

The invention relates to an HEMT device with reduced on-resistance and a process for manufacturing the same. A HEMT transistor is formed on a semiconductor body having a semiconductor heterostructure. A gate region of semiconductor material is arranged on the semiconductor body and has a side surface. A sealing region of non-conductive material extends on a side of the gate region; and a passivation layer of a non-conductive material has surface portions on the semiconductor body, on both sides of the gate region and at a distance therefrom. The sealing region and the passivation region have different characteristics, such as being made of different materials or having different thicknesses. 本公开涉及具有降低的导通电阻的HEMT器件及其制造过程。HEMT晶体管在具有半导体异质结构的半导体本体上形成。半导体材料的栅极区域布置在半导体本体上并且具有侧面。非导电材料的密封区域在栅极区域的侧面上延伸；并且非导电材料的钝化层具有在半导体本体上、在栅极区域的两侧并在与其相距一定距离处延伸的表面部分。密封区域与钝化区域具有不同的特点，诸如由不同的材料制成或具有不同的厚度。