Reverse conducting power semiconductor device and manufacturing method thereof

The invention discloses a reverse conducting power semiconductor device and a manufacturing method thereof, relates to the field of power semiconductor devices, and aims at solving the problems in the existing RC-IGBT (Reverse Conducting Insulated Gate Bipolar Transistor) device, a second conducting type heavily doped sixth semiconductor region is eliminated on the front surface structure of a diode part, so that a parasitic thyristor structure of the diode part is removed; and the width and the depth of a second contact groove of the diode part are designed to be greater than the width and the depth of a first contact groove of the IGBT part respectively, so that the area of a heavily doped seventh semiconductor region of the first conductivity type of the IGBT part is increased, the latch-up resistance of the IGBT part is enhanced, and the reliability of the RC-IGBT is improved. According to the RC-IGBT device, on the basis that the manufacturing cost of the device is not affected, the reverse recovery char