Three-dimensional memory device
A memory device includes a stack structure in which a common source line is formed, and a peripheral circuit structure overlapping the stack structure when viewed in a plan view and including a common source line driver configured to discharge the common source line. The common source line driver in...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A memory device includes a stack structure in which a common source line is formed, and a peripheral circuit structure overlapping the stack structure when viewed in a plan view and including a common source line driver configured to discharge the common source line. The common source line driver includes a first common source line driving unit electrically connected to the common source line through a first network and configured to discharge the common source line, and a second common source line driving unit electrically connected to the common source line through a second network. The second common source line driving unit is electrically connected to the common source line through a second network different from the first network and is configured to discharge the common source line. The first common source line driving unit and the second common source line driving unit are controlled independently of each other.
一种存储器设备包括其中形成共源极线的堆叠结构,以及当在平面图中观察时与堆叠结构重叠并且包括被配置为使共源极线放电的共源极线驱动器的外围电路结构。共源极线驱动器包括第一共源极线驱动单元 |
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