Preparation method of plasma-assisted atomic layer deposition silicon oxide coated fluorescent powder

The invention belongs to the technical field of photoelectric materials, and particularly relates to a preparation method of plasma-assisted atomic layer deposition silicon oxide coated fluorescent powder. The method comprises the following steps: selecting a fluorescent powder base material, and placing the fluorescent powder base material in a plasma generator; then introducing argon and hexamethyldisiloxane, and successfully depositing a layer of uniform and continuous silicon dioxide film on the surface of the fluorescent powder by utilizing the energy of plasma; the deposition process is carried out in 1-3 periods, and during the period, sufficient and uniform mixing of the powder is ensured through airflow and rotational centripetal force, and uniform coating of particles is ensured; and finally grinding the obtained fluorescent powder to prepare the fluorescent powder with silicon dioxide deposited on the surface. According to the invention, the production process is simplified, the production difficul