Method for repairing SiC coating on surface of graphite base

The invention provides a method for repairing a SiC coating on the surface of a graphite base. The method comprises the following steps: firstly, filling a damaged part of a SiC coating on the surface of a graphite base with a compound prepared from a polymer with high residual carbon content after...

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Hauptverfasser: HE SHAOLONG, XUE YUNZHOU
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides a method for repairing a SiC coating on the surface of a graphite base. The method comprises the following steps: firstly, filling a damaged part of a SiC coating on the surface of a graphite base with a compound prepared from a polymer with high residual carbon content after pyrolysis and a silicon carbide filler, and carbonizing the polymer through heat treatment to form a porous structure; and then, coating the surfaces of the carbonized polymer and the silicon carbide filler with slurry formed by elemental silicon and polycarbosilane, and carrying out infiltration treatment above the melting point of the elemental silicon. By means of the method, the high-density SiC repairing layer with high binding force with the surrounding structure can be formed at the damaged position, and the service life of the graphite base can be prolonged. 本发明提供一种石墨基座表面SiC涂层的修补方法。首先,利用热解后残余碳含量高的聚合物与碳化硅填料配成的复合物填补石墨基座表面SiC涂层受损处,通过热处理将所述聚合物碳化形成多孔结构;然后,采用硅单质与聚碳硅烷形成的浆料涂敷在碳化后的聚合物与碳化硅填料的表面,并于单质硅熔点以上进行熔渗处理。利用该方法能