Non-volatile memory cell

The invention discloses a non-volatile memory unit cell, comprising: at least one unit cell, each unit cell comprising: a fin-shaped channel extending along a Y direction; the source electrode and the drain electrode are respectively adjacent to two ends of the fin-shaped channel in the Y direction; the first part and the second part are respectively adjacent to two sides of the fin-shaped channel in an X direction, the first part comprises a first floating gate and a first control valve, and the second part comprises a second floating gate and a second control valve; and the third part is adjacent to the fin-shaped channel in a Z direction, and the third part comprises a third floating gate and a third control gate. Through the first floating gate, the second floating gate and the third floating gate, one unit cell can store three pieces of bit data, and improvement of memory capacity is facilitated. 本发明公开一种非挥发性存储器晶胞，包含：至少一单位晶胞，每一单位晶胞皆包含有：一鳍状通道，沿一Y方向延伸；一源极及一汲极，分别在该Y方向上相邻该鳍状通道的两端；一第一部分及一第二部分，分别在一X方向上相邻该鳍状通道的两