Preparation method of semiconductor structure and semiconductor structure
The invention relates to a preparation method of a semiconductor structure and the semiconductor structure. The preparation method of the semiconductor structure comprises the steps of providing a substrate; forming an initial structure on the substrate, wherein the initial structure at least compri...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a preparation method of a semiconductor structure and the semiconductor structure. The preparation method of the semiconductor structure comprises the steps of providing a substrate; forming an initial structure on the substrate, wherein the initial structure at least comprises a conductive structure located on the substrate; forming a protective material layer on the top surface of the initial structure, wherein the initial structure and the protective material layer form a middle structure; the intermediate structure is placed on an etching machine table, the protective material layer is etched to form a protective layer, and the initial structure and the protective layer form a target structure; and in a preset atmosphere, removing the target structure on the etching machine table, and adjusting the resistance value of the conductive structure in the process of removing the target structure. The preparation method of the semiconductor structure can enlarge the resistance adjusting |
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