Temperature measuring structure for silicon carbide furnace

The invention relates to the technical field of semiconductors. A temperature measuring structure for a silicon carbide furnace comprises a seed crystal axis temperature measuring mechanism and a crucible axis temperature measuring mechanism, and each of the seed crystal axis temperature measuring m...

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Hauptverfasser: XU SHUWEN, LAI ZHANGTIAN, XIA XIAOPING, CHEN SHILI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to the technical field of semiconductors. A temperature measuring structure for a silicon carbide furnace comprises a seed crystal axis temperature measuring mechanism and a crucible axis temperature measuring mechanism, and each of the seed crystal axis temperature measuring mechanism and the crucible axis temperature measuring mechanism comprises a thermodetector and a support. The seed crystal axis temperature measuring mechanism comprises an upper water cooling shaft and a seed crystal graphite shaft which are arranged up and down, and the upper water cooling shaft and the seed crystal graphite shaft are hollow shafts; the crucible axis temperature measuring mechanism comprises a crucible supporting shaft and a lower water cooling shaft which are arranged up and down, the crucible supporting shaft and the lower water cooling shaft are both hollow shafts, and the top of the crucible supporting shaft is in butt joint with an open hole formed in the center of the bottom of the thermal f