Circuit assembly for topological semiconductor switch of inverter

A circuit assembly for a topological semiconductor switch of an inverter is presented. A topological semiconductor switch has at least two power semiconductors and is divided into two sets of power semiconductors formed of different semiconductor materials. The first set of power semiconductors is formed of power semiconductors having a wide band gap. The sizing of the surface used by the power semiconductors of the first group and/or the design of the switching speed thereof are carried out for the load in the partial load operation. Furthermore, the sizing of the surfaces of the power semiconductors of the second group is carried out for the load in full-load operation. 提出了一种用于逆变器的拓扑半导体开关的电路组件。拓扑半导体开关具有至少两个功率半导体，并且被分为由不同的半导体材料形成的两组功率半导体。第一组功率半导体由具有宽带隙的功率半导体形成。对由第一组的功率半导体所使用的表面的定尺寸和/或其开关速度的设计针对部分负载运行中的负载进行。此外，对第二组的功率半导体的表面的定尺寸针对满载运行中的负载进行。