SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a substrate, a bottom gate, a bottom gate dielectric layer, a first semiconductor layer, a second semiconductor layer, a top gate dielectric layer, a top gate, a source and a drain. The bottom gate is over the substrate. The bottom gate dielectric layer is located on the bottom gate. The first semiconductor layer is located on the bottom gate dielectric layer. The second semiconductor layer is located on the first semiconductor layer and comprises an intrinsic semiconductor region and a heavily doped region. The top gate dielectric layer is located on the second semiconductor layer. The top gate is located on the top gate dielectric layer and overlaps the intrinsic semiconductor region. The source is connected to the intrinsic semiconductor region. The drain electrode is connected with the heavily doped region. 本发明公开一种半导体装置及其制造方法，其中半导体装置包括基板、底栅极、底栅介电层、第一半导体层、第二半导体层、顶栅介电层、顶栅极、源极以及漏极。底栅极位于基板上方。底