Simulation construction method of CMOS circuit and CMOS circuit
The invention discloses a CMOS circuit simulation construction method and a CMOS circuit, and belongs to the field of CMOS circuit simulation design, the method comprises the following steps: adding a voltage compensation circuit model, a voltage transmission circuit model and a voltage mode selecti...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a CMOS circuit simulation construction method and a CMOS circuit, and belongs to the field of CMOS circuit simulation design, the method comprises the following steps: adding a voltage compensation circuit model, a voltage transmission circuit model and a voltage mode selection circuit model at the input end of a first CMOS circuit model in a single voltage mode to construct a second CMOS circuit model in a multi-voltage mode; simulation verification is carried out on the voltage compensation performance of the voltage compensation circuit model, the voltage transmission performance of the voltage transmission circuit model and input and output voltage waveforms; a first proportional relationship between channel width-to-length ratios of a plurality of target transistors in the voltage compensation circuit model and a second proportional relationship between channel width-to-length ratios of a plurality of target transistors in the voltage transmission circuit model are obtained. Accor |
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