IGBT (Insulated Gate Bipolar Translator) peak voltage control method and device and IGBT system

The invention provides an IGBT peak voltage control method and device and an IGBT system, and the method comprises the steps: obtaining a voltage waveform, the voltage waveform being a waveform corresponding to the change condition of the voltage of a collector electrode of an IGBT along with time under the control of a gate drive signal, and the gate drive signal being used for controlling the switching state of the IGBT; according to the voltage waveform, at least determining the actual peak voltage of the IGBT in the turn-off transient state; under the condition that the actual peak voltage is not in the voltage peak interval, the grid driving signal is adjusted, so that the adjusted actual peak voltage is in the voltage peak interval, the maximum value of the voltage peak interval is smaller than the maximum value of the peak voltage of the IGBT, the maximum value of the peak voltage is the maximum instantaneous voltage capable of being borne by the IGBT, and the maximum instantaneous voltage is the maxim