Semiconductor device and preparation method thereof, and electronic equipment

The invention discloses a semiconductor device and a preparation method thereof, and electronic equipment, the semiconductor device comprises a semiconductor substrate, a first isolation layer and an ion implantation layer, the semiconductor substrate comprises a source region, a drain region and a channel region, the channel region is located between the source region and the drain region, the source region comprises a first groove, and the drain region comprises a second groove; the first isolation layer is formed on the side surface, facing the first groove, of the side wall of the first groove and/or the side surface, facing the second groove, of the side wall of the second groove; the ion implantation layer comprises a first ion implantation layer and a second ion implantation layer, the first ion implantation layer is formed at the bottom of the first groove, and the second ion implantation layer is formed at the bottom of the second groove. The channel effect problem of the semiconductor device provide