Semiconductor device and preparation method thereof, and electronic equipment

The invention discloses a semiconductor device and a preparation method thereof, and electronic equipment, the semiconductor device comprises a substrate, a channel layer stack part, a surrounding type grid electrode, a source-drain function part and a first side wall, the channel layer stack part is formed at one side of the substrate and comprises a plurality of channel layers, the length direction of the channel layers is perpendicular to the thickness direction of the substrate, and the surrounding type grid electrode is arranged on the first side wall. The channel layer comprises a first end, a middle section and a second end which are arranged along the length direction; the surrounding type grid electrode surrounds the middle section in the length direction of the surrounding channel layer; the first side wall is located between the source-drain function part and the surrounding type grid electrode and located between the first ends of the adjacent channel layers and between the second ends of the adja