Etching method of interlayer gap filling film of semiconductor device and semiconductor device structure

The invention belongs to the technical field of semiconductor devices, and particularly relates to an etching method of an interlayer gap filling film of a semiconductor device and a semiconductor device structure. The method includes providing a substrate; etching the substrate to form a groove; fo...

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Bibliographische Detailangaben

1. Verfasser:	AHN KYOUNG JIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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