Etching method of interlayer gap filling film of semiconductor device and semiconductor device structure

The invention belongs to the technical field of semiconductor devices, and particularly relates to an etching method of an interlayer gap filling film of a semiconductor device and a semiconductor device structure. The method includes providing a substrate; etching the substrate to form a groove; forming a gap filling film in the trench; and in the process of etching the gap filling film by using the corrosive liquid, monitoring a target parameter related to the etching depth, and adjusting the concentration of the corrosive liquid according to the target parameter. According to the etching method designed by the invention, the etching rate of each depth interval of the film is finely adjusted by performing online adjustment on the concentration of the corrosive liquid, so that the depth etching profile is improved. 本申请属于半导体器件技术领域，具体涉及半导体器件层间间隙填充膜的刻蚀方法及半导体器件结构。该方法包括提供基底；对基底进行刻蚀以形成沟槽；向沟槽内部形成间隙填充膜；对间隙填充膜进行各向同性湿法刻蚀：采用腐蚀液对间隙填充膜刻蚀过程中，监测与刻蚀深度相关的目标参量，根据目标参量调整腐蚀液浓度。本申请设计的刻蚀方法通过对腐蚀液浓度进行在线调整以对膜质各深度区间的刻蚀速率进行细微调整，以改善深度刻蚀