P-on-n type tellurium-cadmium-mercury pixel-level in-situ growth array detector and preparation method thereof

The invention provides a P-on-n type mercury cadmium telluride pixel level in-situ growth array detector. The substrate material layer, the n-type absorption layer, the passivation isolation grid layer, the array P-type cap area, the passivation layer and the electrode contact hole are sequentially...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HUANG YU, KONG LINGWEN, WU JUN, QI WENBIN, ZHAO WEN, KONG JINCHENG, WANG WENJIN, YANG JIN, ZUO DAFAN, CHEN SHAN, WANG XUESONG, ZHANG YANG, GUI XIHUAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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