P-on-n type tellurium-cadmium-mercury pixel-level in-situ growth array detector and preparation method thereof

The invention provides a P-on-n type mercury cadmium telluride pixel level in-situ growth array detector. The substrate material layer, the n-type absorption layer, the passivation isolation grid layer, the array P-type cap area, the passivation layer and the electrode contact hole are sequentially stacked from bottom to top, the passivation isolation grid layer is used for isolating pixels, the array P-type cap area is located in an isolation grid of the passivation isolation grid layer, the passivation layer covers the passivation isolation grid layer and the array P-type cap area, and the electrode contact hole is formed in the array P-type cap area and is not covered by the passivation layer. And a contact electrode layer disposed in the electrode contact hole. According to the HgCdTe P-on-n heterojunction detector, the HgCdTe heterojunction material is isolated into independent pixels, interfaces growing in a P-type Cap region are mutually diffused, the HgCdTe P-on-n heterojunction detector is obtained,