P-on-n type tellurium-cadmium-mercury pixel-level in-situ growth array detector and preparation method thereof
The invention provides a P-on-n type mercury cadmium telluride pixel level in-situ growth array detector. The substrate material layer, the n-type absorption layer, the passivation isolation grid layer, the array P-type cap area, the passivation layer and the electrode contact hole are sequentially...
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| creator | HUANG YU KONG LINGWEN WU JUN QI WENBIN ZHAO WEN KONG JINCHENG WANG WENJIN YANG JIN ZUO DAFAN CHEN SHAN WANG XUESONG ZHANG YANG GUI XIHUAN |
| description | The invention provides a P-on-n type mercury cadmium telluride pixel level in-situ growth array detector. The substrate material layer, the n-type absorption layer, the passivation isolation grid layer, the array P-type cap area, the passivation layer and the electrode contact hole are sequentially stacked from bottom to top, the passivation isolation grid layer is used for isolating pixels, the array P-type cap area is located in an isolation grid of the passivation isolation grid layer, the passivation layer covers the passivation isolation grid layer and the array P-type cap area, and the electrode contact hole is formed in the array P-type cap area and is not covered by the passivation layer. And a contact electrode layer disposed in the electrode contact hole. According to the HgCdTe P-on-n heterojunction detector, the HgCdTe heterojunction material is isolated into independent pixels, interfaces growing in a P-type Cap region are mutually diffused, the HgCdTe P-on-n heterojunction detector is obtained, |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN118538820A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN118538820A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN118538820A3</originalsourceid><addsrcrecordid>eNqNyj0KwkAQBtA0FqLeYTzAgjEIaSUoVmJhH5bdL2Zh_5jMqrm9CB7A6jVvWcWbSlFFkjmDBN4XdiUoo234GsCm8EzZveGVxxOeXFSTk0IPTi8ZSTPrmSwERhKTjpYyI2vW4lKkABmTJRnBSMO6WgzaT9j8XFXb8-neXRRy6jFlbRAhfXet6_bQtO1-d2z-OR_12kMi</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>P-on-n type tellurium-cadmium-mercury pixel-level in-situ growth array detector and preparation method thereof</title><source>esp@cenet</source><creator>HUANG YU ; KONG LINGWEN ; WU JUN ; QI WENBIN ; ZHAO WEN ; KONG JINCHENG ; WANG WENJIN ; YANG JIN ; ZUO DAFAN ; CHEN SHAN ; WANG XUESONG ; ZHANG YANG ; GUI XIHUAN</creator><creatorcontrib>HUANG YU ; KONG LINGWEN ; WU JUN ; QI WENBIN ; ZHAO WEN ; KONG JINCHENG ; WANG WENJIN ; YANG JIN ; ZUO DAFAN ; CHEN SHAN ; WANG XUESONG ; ZHANG YANG ; GUI XIHUAN</creatorcontrib><description>The invention provides a P-on-n type mercury cadmium telluride pixel level in-situ growth array detector. The substrate material layer, the n-type absorption layer, the passivation isolation grid layer, the array P-type cap area, the passivation layer and the electrode contact hole are sequentially stacked from bottom to top, the passivation isolation grid layer is used for isolating pixels, the array P-type cap area is located in an isolation grid of the passivation isolation grid layer, the passivation layer covers the passivation isolation grid layer and the array P-type cap area, and the electrode contact hole is formed in the array P-type cap area and is not covered by the passivation layer. And a contact electrode layer disposed in the electrode contact hole. According to the HgCdTe P-on-n heterojunction detector, the HgCdTe heterojunction material is isolated into independent pixels, interfaces growing in a P-type Cap region are mutually diffused, the HgCdTe P-on-n heterojunction detector is obtained,</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240823&DB=EPODOC&CC=CN&NR=118538820A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240823&DB=EPODOC&CC=CN&NR=118538820A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUANG YU</creatorcontrib><creatorcontrib>KONG LINGWEN</creatorcontrib><creatorcontrib>WU JUN</creatorcontrib><creatorcontrib>QI WENBIN</creatorcontrib><creatorcontrib>ZHAO WEN</creatorcontrib><creatorcontrib>KONG JINCHENG</creatorcontrib><creatorcontrib>WANG WENJIN</creatorcontrib><creatorcontrib>YANG JIN</creatorcontrib><creatorcontrib>ZUO DAFAN</creatorcontrib><creatorcontrib>CHEN SHAN</creatorcontrib><creatorcontrib>WANG XUESONG</creatorcontrib><creatorcontrib>ZHANG YANG</creatorcontrib><creatorcontrib>GUI XIHUAN</creatorcontrib><title>P-on-n type tellurium-cadmium-mercury pixel-level in-situ growth array detector and preparation method thereof</title><description>The invention provides a P-on-n type mercury cadmium telluride pixel level in-situ growth array detector. The substrate material layer, the n-type absorption layer, the passivation isolation grid layer, the array P-type cap area, the passivation layer and the electrode contact hole are sequentially stacked from bottom to top, the passivation isolation grid layer is used for isolating pixels, the array P-type cap area is located in an isolation grid of the passivation isolation grid layer, the passivation layer covers the passivation isolation grid layer and the array P-type cap area, and the electrode contact hole is formed in the array P-type cap area and is not covered by the passivation layer. And a contact electrode layer disposed in the electrode contact hole. According to the HgCdTe P-on-n heterojunction detector, the HgCdTe heterojunction material is isolated into independent pixels, interfaces growing in a P-type Cap region are mutually diffused, the HgCdTe P-on-n heterojunction detector is obtained,</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyj0KwkAQBtA0FqLeYTzAgjEIaSUoVmJhH5bdL2Zh_5jMqrm9CB7A6jVvWcWbSlFFkjmDBN4XdiUoo234GsCm8EzZveGVxxOeXFSTk0IPTi8ZSTPrmSwERhKTjpYyI2vW4lKkABmTJRnBSMO6WgzaT9j8XFXb8-neXRRy6jFlbRAhfXet6_bQtO1-d2z-OR_12kMi</recordid><startdate>20240823</startdate><enddate>20240823</enddate><creator>HUANG YU</creator><creator>KONG LINGWEN</creator><creator>WU JUN</creator><creator>QI WENBIN</creator><creator>ZHAO WEN</creator><creator>KONG JINCHENG</creator><creator>WANG WENJIN</creator><creator>YANG JIN</creator><creator>ZUO DAFAN</creator><creator>CHEN SHAN</creator><creator>WANG XUESONG</creator><creator>ZHANG YANG</creator><creator>GUI XIHUAN</creator><scope>EVB</scope></search><sort><creationdate>20240823</creationdate><title>P-on-n type tellurium-cadmium-mercury pixel-level in-situ growth array detector and preparation method thereof</title><author>HUANG YU ; KONG LINGWEN ; WU JUN ; QI WENBIN ; ZHAO WEN ; KONG JINCHENG ; WANG WENJIN ; YANG JIN ; ZUO DAFAN ; CHEN SHAN ; WANG XUESONG ; ZHANG YANG ; GUI XIHUAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN118538820A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HUANG YU</creatorcontrib><creatorcontrib>KONG LINGWEN</creatorcontrib><creatorcontrib>WU JUN</creatorcontrib><creatorcontrib>QI WENBIN</creatorcontrib><creatorcontrib>ZHAO WEN</creatorcontrib><creatorcontrib>KONG JINCHENG</creatorcontrib><creatorcontrib>WANG WENJIN</creatorcontrib><creatorcontrib>YANG JIN</creatorcontrib><creatorcontrib>ZUO DAFAN</creatorcontrib><creatorcontrib>CHEN SHAN</creatorcontrib><creatorcontrib>WANG XUESONG</creatorcontrib><creatorcontrib>ZHANG YANG</creatorcontrib><creatorcontrib>GUI XIHUAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HUANG YU</au><au>KONG LINGWEN</au><au>WU JUN</au><au>QI WENBIN</au><au>ZHAO WEN</au><au>KONG JINCHENG</au><au>WANG WENJIN</au><au>YANG JIN</au><au>ZUO DAFAN</au><au>CHEN SHAN</au><au>WANG XUESONG</au><au>ZHANG YANG</au><au>GUI XIHUAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>P-on-n type tellurium-cadmium-mercury pixel-level in-situ growth array detector and preparation method thereof</title><date>2024-08-23</date><risdate>2024</risdate><abstract>The invention provides a P-on-n type mercury cadmium telluride pixel level in-situ growth array detector. The substrate material layer, the n-type absorption layer, the passivation isolation grid layer, the array P-type cap area, the passivation layer and the electrode contact hole are sequentially stacked from bottom to top, the passivation isolation grid layer is used for isolating pixels, the array P-type cap area is located in an isolation grid of the passivation isolation grid layer, the passivation layer covers the passivation isolation grid layer and the array P-type cap area, and the electrode contact hole is formed in the array P-type cap area and is not covered by the passivation layer. And a contact electrode layer disposed in the electrode contact hole. According to the HgCdTe P-on-n heterojunction detector, the HgCdTe heterojunction material is isolated into independent pixels, interfaces growing in a P-type Cap region are mutually diffused, the HgCdTe P-on-n heterojunction detector is obtained,</abstract><oa>free_for_read</oa></addata></record> |
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| title | P-on-n type tellurium-cadmium-mercury pixel-level in-situ growth array detector and preparation method thereof |
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