Stacked device structure and forming method thereof

Dipole engineering techniques are disclosed that incorporate dipole dopants and/or nitrogen into a gate dielectric (e.g., its high-k dielectric layer) to achieve multi-threshold voltage transistor adjustment of a transistor. Dipole engineering techniques include: (1) forming a dipole dopant source l...

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Bibliographische Detailangaben

Hauptverfasser:	LIN ZONGDA, CHEN XUERU, LAI BEIYING, HOU CHENGHAO, LIN ZHENGJIE, XU ZHI'AN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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