Thinned monocrystalline silicon wafer cutting method and device
The invention belongs to the technical field of silicon wafer processing, and particularly relates to a thinned monocrystalline silicon wafer cutting method and device.The thinned monocrystalline silicon wafer cutting method comprises the following steps that S1, the two ends of monocrystalline sili...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention belongs to the technical field of silicon wafer processing, and particularly relates to a thinned monocrystalline silicon wafer cutting method and device.The thinned monocrystalline silicon wafer cutting method comprises the following steps that S1, the two ends of monocrystalline silicon are fixed to a workbench, the monocrystalline silicon is located below five sets of cutting lines, and the five sets of cutting lines are controlled to rotate through a first motor and a first rotating shaft; s2, the monocrystalline silicon is slowly moved upwards through an ascending workbench, the rotating five sets of cutting lines cut the monocrystalline silicon, and four cut monocrystalline silicon pieces are clamped by a clamping part; s3, after the monocrystalline silicon is cut by the five groups of cutting lines, the remaining monocrystalline silicon descends to the initial position along with the workbench, the monocrystalline silicon pieces in the clamping part are taken out, the five groups of cutti |
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