SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device has an element region and a sensing region. The gate-type switching element in the element region has a plurality of gate trenches, a gate electrode, and an interlayer insulating layer covering the upper surface of the gate electrode. A temperature sensing diode in a sensing region includes an anode region, a cathode region, a plurality of first dummy trenches provided in the anode region, a first insulating layer disposed in each of the first dummy trenches, a plurality of second dummy trenches provided in the cathode region, and a second insulating layer disposed in each of the second dummy trenches. In a semiconductor device having a switching element and a temperature sensing diode, an interlayer insulating layer is appropriately formed. 提供半导体装置及其制造方法。半导体装置具有元件区域和感测区域。元件区域内的栅极型开关元件具有多个栅极沟槽、栅极电极和将栅极电极的上表面覆盖的层间绝缘层。感测区域内的温度感测二极管具有阳极区域、阴极区域、设在上述阳极区域内的多个第1伪沟槽、配置在上述各第1伪沟槽内的第1绝缘层、设在上述阴极区域内的多个第2伪沟槽、和配置在上述各第2