Circuit unit based on indium gallium zinc oxide transistor, preparation method and circuit architecture

The invention provides a circuit unit based on an indium gallium zinc oxide transistor, a preparation method and a circuit architecture, which can be applied to the technical field of circuits. The circuit unit comprises a first indium gallium zinc oxide transistor, a second indium gallium zinc oxide transistor, an N-type field effect transistor and a P-type field effect transistor. Wherein the first indium gallium zinc oxide transistor is used for controlling the circuit unit to execute write-in operation. The first indium gallium zinc oxide transistor and the N-type field effect transistor are used for jointly controlling the circuit unit to execute reading operation. The first indium gallium zinc oxide transistor, the N-type field effect transistor and the P-type field effect transistor are used for jointly controlling the circuit unit to execute content search operation. And the second indium gallium zinc oxide transistor is used for storing data. 本公开提供了一种基于氧化铟镓锌晶体管的电路单元、制备方法和电路架构，可以应用于电路技术领域。该电路单元包括：第一氧化